Review of Silicon Reactivity of Self-assembled monolayer and its Properties

Abstract

In most cases, the assumption of perfect high viscosity between silicon and silver underlies the modelization of silicene on Ag(111). According to recent reports, growth does not take place on top of the Ag(111) terraces, but rather within the first layer of them. In this article, we present the results of a study that combines scanning tunnelling microscopy and density functional theory to simulate the nucleation process and reveal the fundamental exchange mechanism between Si and the Ag atoms in the uppermost layer. Silicon are use in molecular electronics, we give a summary of key features of the monolayers of silicon in self-assembly of organic substrates. The many chemical methods used to graft (SAMs) of alkanes with various chain lengths on bare Si or native Si oxide have been reviewed, by using suitable examples, it has been demonstrated the value of various analysis of discourse in identifying the thicknesses, arranging and orientation of molucules, fields related, growth dynamics, and chemical properties of the SAMs. SAMs must have metal counterelectrodes in order to measure and use their electrical characteristics in molecular devices for electric uses. Soft lithography, vapour deposition, and soft metal contacts have all been discussed in relation of the range of alternatives for the accumulation of metal counter electrodes. The electronic transport in dielectric SAMs can be explained by a number of theoretical designs, including tunnelling, thermionic emission, Poole-Frenkel emission, and hopping conduction. Several experimental values on alkane SAMs were examined to this type of models.